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| MITSUBISHI RF POWER MODULE M68757H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO OUTLINE DRAWING 300.2 26.60.2 21.20.2 2-R1.50.1 Dimensions in mm BLOCK DIAGRAM 2 3 1 5 1 2 3 4 4 5 0.45 61 13.71 18.81 23.91 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG3.5V, ZG=ZL=50 f=896-941MHz, ZG=ZL=50 f=896-941MHz, ZG=ZL=50 f=896-941MHz, ZG=ZL=50 Ratings 9.2 4 70 5 -30 to +100 -40 to +100 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted) Symbol f PO T 2fO in Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 896 3 30 Max 941 Unit MHz W % dBc VDD=7.2V, VGG=3.5V, Pin=50mW -28 4 No parasitic oscillation No degradation or destroy ZG=ZL=50, VDD=5-9.2V, Load VSWR <4:1 VDD=9V, Pin=50mW, PO=3W (VGG Adjust), ZL=20:1 Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97 MITSUBISHI RF POWER MODULE M68757H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY 6 5 4 3 2 60 50 40 30 20 1.0 f=896MHz VDD=7.2V VGG=3.5V ZG=ZL=50 0.1 1 10 INPUT POWER Pin (mW) 0.1 100 1.0 10.0 PO 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 T PO T VDD=7.2V in 1 VGG=3.5V 10 Pin=50mW ZG=ZL=50 0 0 880 890 900 910 920 930 940 950 FREQUENCY f (MHz) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 T OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 5.5 55 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.5 2.0 2.5 T PO 50 45 40 35 30 25 20 15 f=896MHz VDD=7.2V 10 VGG=3.5V 5 ZG=ZL=50 0 3.0 3.5 4.0 10.0 PO 10.0 1.0 f=941MHz VDD=7.2V VGG=3.5V ZG=ZL=50 0.1 1 10 INPUT POWER Pin (mW) 1.0 0.1 100 GATE SUPPLY VOLTAGE VGG (V) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 5.5 55 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.5 2.0 2.5 T PO 50 45 40 35 30 25 20 15 f=941MHz VDD=7.2V 10 VGG=3.5V 5 ZG=ZL=50 0 3.0 3.5 4.0 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 10 50 9 8 7 6 5 4 3 2 1 0 2 3 4 5 6 7 8 f=896MHz VGG=3.5V Pin=50mW ZG=ZL=50 PO T 45 40 35 30 25 20 15 10 5 0 9 10 11 12 GATE SUPPLY VOLTAGE VGG (V) DRAIN SUPPLY VOLTAGE VDD (V) Nov. 97 MITSUBISHI RF POWER MODULE M68757H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 10 50 9 8 7 6 5 4 3 2 1 0 2 3 4 5 6 7 8 f=941MHz VGG=3.5V Pin=50mW ZG=ZL=50 T PO 45 40 35 30 25 20 15 10 5 0 9 10 11 12 DRAIN SUPPLY VOLTAGE VDD (V) Nov. 97 |
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